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Adatom effective charge in morphology evolution on Si(111) surfaceLATYSHEV, A. V; MINODA, H; TANISHIRO, Y et al.Applied surface science. 1998, Vol 130-32, pp 60-66, issn 0169-4332Conference Paper

Adsorption and growth on nanostructured surfacesZEPPENFELD, P; DIERCKS, V; TÖLKES, C et al.Applied surface science. 1998, Vol 130-32, pp 484-490, issn 0169-4332Conference Paper

Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfacesYOKOYAMA, S; IKEDA, N; KAJIKAWA, K et al.Applied surface science. 1998, Vol 130-32, pp 352-356, issn 0169-4332Conference Paper

Competition between terrace and step nucleation : epitaxy of CaF₂ on vicinal Si(111) studied by atomic force microscopyWOLLSCHLÄGER, J; PIETSCH, H; KLUST, A et al.Applied surface science. 1998, Vol 130-32, pp 29-35, issn 0169-4332Conference Paper

Electronic characterization of Si/SiO₂ structure using photo-CVD SiO₂ thin film on atomically flat Si substrateMAIDA, O; YAMAMOTO, H; OKADA, N et al.Applied surface science. 1998, Vol 130-32, pp 214-220, issn 0169-4332Conference Paper

Fabrication and characterization of field effect transistors using donor and acceptor stacked layersIIZUKA, M; SHIRATORI, Y; KUNIYOSHI, S et al.Applied surface science. 1998, Vol 130-32, pp 914-918, issn 0169-4332Conference Paper

Hydrogen terminated Si(111) surface studied by RHEEDYAKOVLEV, N. L; SHUSTERMAN, Yu. V; MAKSYM, P. A et al.Applied surface science. 1998, Vol 130-32, pp 310-313, issn 0169-4332Conference Paper

Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germaniumSUGAHARA, S; HOSAKA, K; MATSUMURA, M et al.Applied surface science. 1998, Vol 130-32, pp 327-333, issn 0169-4332Conference Paper

In situ surface characterization of SrTiO₃(100) substrates and homoepitaxial SrTiO₃ thin films grown by molecular beam epitaxy and pulsed laser depositionNAKAMURA, T; INADA, H; IIYAMA, M et al.Applied surface science. 1998, Vol 130-32, pp 576-581, issn 0169-4332Conference Paper

Initial stage of Schottky barrier formation of ferromagnetic MnSb(0001) films on GaAs(111)BOSHIMA, M; SHUZO, M; ONO, K et al.Applied surface science. 1998, Vol 130-32, pp 892-898, issn 0169-4332Conference Paper

Local bonding structures of SiO₂ films on H-terminated Si(100) surfaces studied by using high-resolution electron energy loss spectroscopyNAKAGAWA, Y; HIGASHI, M; IKEDA, H et al.Applied surface science. 1998, Vol 130-32, pp 192-196, issn 0169-4332Conference Paper

Magnetic properties of atomically-thin epitaxial dots and stripes with micrometer lateral sizeRAMSPERGER, U; VATERLAUS, A; MAIER, U et al.Applied surface science. 1998, Vol 130-32, pp 889-891, issn 0169-4332Conference Paper

New structural model for the Si(111)4 x 1-In reconstructionSARANIN, A. A; ZOTOV, A. V; IGNATOVICH, K. V et al.Applied surface science. 1998, Vol 130-32, pp 96-100, issn 0169-4332Conference Paper

Phonon dispersion of nano-graphite ribbonsIGAMI, M; FUJITA, M; MIZUNO, S et al.Applied surface science. 1998, Vol 130-32, pp 870-875, issn 0169-4332Conference Paper

Polar surface dependence of epitaxy processes : ZnSe on GaAs{111}A, B-(2 x 2)OHTAKE, A; MIWA, S; KUO, L.-H et al.Applied surface science. 1998, Vol 130-32, pp 398-402, issn 0169-4332Conference Paper

Possibilities for atom by atom restructuring of surfaces employing native substrate atoms as well as foreign speciesMEYER, G; BARTELS, L; ZÖPHEL, S et al.Applied surface science. 1998, Vol 130-32, pp 527-533, issn 0169-4332Conference Paper

Reactivity of O₂ with Si(111) surfaces with different surface structuresSHIMADA, K; ISHIMARU, T; KATSUBE, S et al.Applied surface science. 1998, Vol 130-32, pp 170-175, issn 0169-4332Conference Paper

Scanning tunneling microscopy observations of surface structures on ordered GaInAs layers grown on InPOHKOUCHI, S; GOMYO, A.Applied surface science. 1998, Vol 130-32, pp 447-451, issn 0169-4332Conference Paper

Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growthKASU, M; MAKIMOTO, T; KOBAYASHI, N et al.Applied surface science. 1998, Vol 130-32, pp 452-456, issn 0169-4332Conference Paper

Surface, interface and valence band structures of ultra-thin silicon oxidesHATTORI, T.Applied surface science. 1998, Vol 130-32, pp 156-164, issn 0169-4332Conference Paper